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1. product profile 1.1 general description 600 w ldmos pulsed power transistor intended for tcas and iff applications in the 1030 mhz to 1090 mhz range. 1.2 features and benefits ? typical pulsed rf performance at a frequen cy of 1030 mhz to 1090 mhz, a supply voltage of 48 v, an i dq of 100 ma, a t p of 50 s with of 2 %: ? output power = 600 w ? power gain = 17 db ? efficiency = 52 % ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (1030 mhz to 1090 mhz) ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restricti on of hazardous substances (rohs) BLA6H1011-600 ldmos avionics power transistor rev. 01 ? 22 april 2010 product data sheet table 1. test information typical rf performance at t case =25 c; t p = 50 s; = 2 %; i dq = 100 ma; in a class-ab production test circuit. mode of operation f v ds p l g p d t r t f (mhz) (v) (w) (db) (%) (ns) (ns) pulsed rf 1030 to 1090 48 600 17 52 11 5 caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 2 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 1.3 applications ? 600 w ldmos pulsed power transistor intended for tcas and iff applications in the 1030 mhz to 1090 mhz frequency range 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 4 3 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLA6H1011-600 - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage 0.5 13 v i d drain current - 72 a t stg storage temperature ? 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions typ unit z th(j-case) transient thermal impedance from junction to case t case =85 c; p l =600w t p = 100 s; = 10 % 0.06 k/w t p = 50 s; = 2 % 0.035 k/w
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 3 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 6. characteristics 6.1 ruggedness in class-ab operation the BLA6H1011-600 is capable of withstanding a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =48v; i dq =100ma; p l =600w; t p = 50 s; = 2 %; f = 1030 mhz. table 6. dc characteristics t j = 25 c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.7 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.25 1.8 2.25 v i dss drain leakage current v gs =0v; v ds =50v--1.4 a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 32 42 - a i gss gate leakage current v gs =11v; v ds =0v--140na g fs forward transconductance v ds =10v; i d = 270 ma 1.6 3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.5a -100169m table 7. rf characteristics mode of operation: pulsed rf; t p = 50 s; = 2 %; rf performance at v ds =48v; i dq =100ma; t case =25 c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit p l output power 600 - - w v ds drain-source voltage p l =600w--48v g p power gain p l =600w 1617- db rl in input return loss p l =600w 8 12 - db p l(1db) output power at 1 db gain compression - 700 - w d drain efficiency p l =600w 4752- % p droop(pulse) pulse droop power p l =600w - 0 0.3 db t r rise time p l = 600 w - 11 30 ns t f fall time p l =600w - 5 30 ns
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 4 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 7. application information 7.1 impedance information 7.2 performance curves table 8. typical impedance typical values per section unless otherwise specified. f z s z l mhz 1030 1.702 ? j1.816 0.977 + j0.049 1060 1.815 ? j1.760 1.033 + j0.221 1090 1.912 ? j1.751 1.086 + j0.379 fig 1. definition of transistor impedance 001aaf05 9 drain z l z s gate t h = 25 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz t h = 25 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz fig 2. power gain as a function of load power; typical values fig 3. drain efficiency as a function of load power; typical values 001aal832 p l (w) 0 900 600 300 8 12 4 16 20 g p (db) 0 (1) (2) p l (w) 0 800 600 200 400 001aal833 20 40 60 d (%) 0 (1) (2)
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 5 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor t h = 25 c; p l = 600 w; v ds =48v; i dq = 100 ma; t p =50 s; =2%. t h = 25 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz fig 4. input return loss as a function of frequency; typical values fig 5. load power as a function of input power; typical values f (mhz) 1095 1075 1035 1085 1065 1045 1025 1055 001aal834 8 4 16 12 20 rl in (db) 0 001aal835 p i (w) 018 12 6 400 200 600 800 p l (w) 0 (1) (2) t h = 65 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz t h = 65 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz fig 6. power gain as a function of load power; typical values fig 7. drain efficiency as a function of load power; typical values p l (w) 0 800 600 200 400 001aal836 8 12 4 16 20 g p (db) 0 (1) (2) p l (w) 0 800 600 200 400 001aal837 20 40 60 d (%) 0 (1) (2)
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 6 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 7.3 curves measured under mo de-s elm pulse-conditions t h = 65 c; v ds =48v; i dq = 100 ma; t p = 50 s; =2%. (1) f = 1030 mhz (2) f = 1090 mhz fig 8. load power as a function of input power; typical values p i (w) 020 16 812 4 001aal838 400 200 600 800 p l (w) 0 (1) (2) f = 1030 mhz; i dq = 100 ma. (1) t h = ? 40 c (2) t h = +25 c (3) t h = +65 c f = 1030 mhz; i dq =100ma. (1) t h = 25 c (2) t h = 65 c fig 9. power gain as a function of load power; typical values fig 10. drain efficiency as a function of load power; typical values p l (w) 0 800 600 200 400 001aal839 15 17 13 19 21 g p (db) 11 (1) (2) (3) p l (w) 0 800 600 200 400 001aal840 40 20 60 80 d (%) 0 (1) (2)
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 7 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 8. test information [1] american technical ce ramics type 800b or capacitor of same quality. [2] american technical ce ramics type 100b or capacitor of same quality. [3] american technical ce ramics type 200b or capacitor of same quality. f = 1030 mhz; i dq = 100 ma. (1) t h = ? 40 c (2) t h = +25 c (3) t h = +65 c fig 11. load power as a function of input power; typical values p i (w) 016 12 48 001aal841 400 200 600 800 p l (w) 0 (1) (2) (3) table 9. list of components for test circuit see figure 12 . component description value remarks c1, c4, c7 multilayer ceramic chip capacitor 82 pf [1] c2 multilayer ceramic chip capacitor 22 f; 35 v c3, c5, c8 multilayer ceramic chip capacitor 39 pf [2] c6, c9 multilayer cerami c chip capacitor 1 nf [2] c10 multilayer ceramic chip capacitor 20 nf [3] c11 electrolytic capacitor 47 f; 63 v r1 smd resistor 56 0603 r2 metal film resistor 51 r3 resistor 11
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 8 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor printed-circuit board (pcb): duroid 6006; r = 6.15 f/m; thickness = 0.64 mm; thickness copper plating = 35 m. see table 9 for a list of components. fig 12. component layout for class-ab production test circuit 001aal84 2 c3 c4 c1 r1 r2 c5 c6 c7 c10 c9 c8 r3 c11 c2
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 9 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 9. package outline fig 13. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 10-02-02 00-03-03 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 10 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description iff identification friend or foe ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency smd surface mounted device tcas traffic collision avoidance system vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes BLA6H1011-600_1 20100422 product data sheet - -
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 11 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive sp ecifications and standards, customer (a) shall use the product without nx p semiconductors? warranty of the document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLA6H1011-600_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 22 april 2010 12 of 13 nxp semiconductors BLA6H1011-600 ldmos avionics power transistor product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLA6H1011-600 ldmos avionics power transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 22 april 2010 document identifier: BLA6H1011-600_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 performance curves . . . . . . . . . . . . . . . . . . . . . 4 7.3 curves measured under mode-s elm pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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